发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a power semiconductor element having high reliability by preventing a heat-transmission over various electrical component parts on a control circuit substrate of heat generated by a semiconductor element for power on a power circuit substrate. CONSTITUTION:A space section 22 in which an air layer is shaped is formed between a power circuit substrate 1 and a laminated circuit substrate 2 while a communicating hole 24 through which the air layer is communicated with the outside is shaped to the peripheral wall section of a resin outer frame 4 for molding. Consequently, heat generated by a semiconductor element 10 for power arranged onto the power circuit substrate 1 is heat-insulated by the air layer generating the convection of the space section 22 in the power semiconductor device. Accordingly, the conduction of heat to the control circuit substrate 2 is prevented, thus obviating the thermal deterioration of various electrical component parts 12 on the control circuit substrate 2.
申请公布号 JPS62222659(A) 申请公布日期 1987.09.30
申请号 JP19860066491 申请日期 1986.03.24
申请人 SHARP CORP 发明人 ITO HIROSHI;KIKUNAGA JIYUNICHIROU;YAMURA KENJI
分类号 H01L23/28;H01L25/07;H01L25/18 主分类号 H01L23/28
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