| 摘要 |
<p>PURPOSE:To improve the adhesiveness of both thin metallic films on a sintered SiC body by forming the thin metallic film essentially consisting of Ti and the thin metallic film having excellent electrical conductivity by a sputtering or vapor deposition method on the surface of the sintered SiC body then subjecting the films to a heat treatment. CONSTITUTION:The surface of the sintered SiC body substrate contg. AlN in a 2-45wt% range and having a high insulating characteristic is subjected to reverse sputtering in a gaseous Ar atmosphere, by which the native oxide film SiO2 formed on the surface is removed. The surface is then cleaned and roughened by treating the same with a hydrofluoric acid, etc., and the Ti is deposited by evaporation to 0.01-10mum thickness on such surface by the sputtering or vapor deposition method. The thin conductive metallic film consisting of Cu, etc., is formed thereon to 2-3mum thickness in succession thereof. The substrate is finally heated for about 10min at 550-650 deg.C in an H2 atmosphere to form a composite chemical material at the boundary between the sintered SiC body substrate and thin Ti film and the boundary between the thin Ti film and the thin Cu, film, by which the sintered SiC body substrate, the thin Ti film, and the thin Cu film are respectively securely bonded.</p> |
