| 摘要 |
PURPOSE:To enable to dry a semiconductor wafer easily and cleanly by a method wherein the semiconductor wafer is rotated at a high speed together with the first vacuum nozzle in the state wherein the semiconductor is supported, in attractive manner, and the second vacuum nozzle is closely contacted in such a manner that the first vacuum nozzle will not be overlapped on the closely contacted part. CONSTITUTION:A wet semiconductor wafer 60 is placed on the first vacuum nozzle 10 is such a manner that it is brought in line with the center of the first vacuum nozzle 10. The semiconductor wafer is attracted by a vacuum system, and when the first vacuum nozzle 10 is rotated at a high speed using a rotating system, the waterdrop 70 on the semiconductor wafer is scattered to outside the semiconductor wafer 60. Then, the first vacuum nozzle 10 rotated at a high speed comes to a stop, the semiconductor wafer 60 is removed from the first vacuum nozzle 10, and the semiconductor wafer 60 is placed in such a manner that it is brought in line with the center of a vacuum nozzle 40. The semiconductor wafer 60 is attracted to the second vacuum nozzle 40 using the vacuum system, and when said second vacuum nozzle 40 is rotated at a high speed, the waterdrop 70 left on the attracting part of the first vacuum nozzle 10 is scattered to outside the semiconductor wafer 60. |
