| 摘要 |
PURPOSE:To obtain the titled transistor, photoconductivity thereof is inhibited and which is difficult to be subject to the effect of stray light and displays stable performance characteristics, by using a superlattice constituted by alternately laminating a large number of a-Si:H layers and a-SiNx:H layers as a semiconductor layer. CONSTITUTION:A superlattice 3 organized by alternately laminating a large number of a-Si:H and a-SiNx:H is employed as a semiconductor layer in a thin-film transistor using an amorphous semiconductor layer. A gate electrode G is formed at a predetermined position on a substrate 1 consisting of glass, etc., a gate insulating film 2 composed of a-SiO2, etc. is laminated on the gate electrode and a-Si:H layers and a-SiNx:H layers having prescribed layer thickness (such as 10Angstrom -100Angstrom ) are laminated alternately in a large number, and the superlattice 3, the whole layer thickness thereof is brought to approximately 2,500Angstrom , is shaped in a stratified manner. A source electrode S and a drain electrode D are formed at predetermined positions on the superlattice 3, and carriers flowing in the superlattice 3 are controlled by applied voltage to the gate electrode G between the source electrode S and the drain electrode D. |
