| 摘要 |
PURPOSE:To prevent etching of even a field oxide film and to prevent short circuits between a wire interconnecting layer and a substrate, by providing a contact hole so that it is wider than a gate electrode, and making a polycrystalline silicon pattern to be functioned as a stopper at this time. CONSTITUTION:A polycrystalline silicon pattern 11 is formed on a field oxide film 2. A thermal oxide film 12 is formed on the surface of the pattern. The resistance of the pattern 11 is very high. The width of the pattern 11 is wider than a gate electrode 6. A contact hole 13 is provided in a CVD-SiO2 film 7 at a position of the pattern 11. The hole 13 is formed so that it is so wide as to extend to the outside of the electrode 6 and it is located within the inside of the pattern 11. Then, etching in forming the hole 13 is stopped by the pattern 11. Thus the etching of even a field oxide film 2 is prevented, and short circuits between a wire interconnecting layer and a substrate 1 are prevented.
|
