| 摘要 |
PURPOSE:To obtain the titled crucible capable of growing a single crystal having high resistivity repeatedly, efficiently, and stably when a compd. semiconductor is grown by coating crystalline AlN having a low content of Si on the inner surface of the crucible. CONSTITUTION:The crystalline AlN contg. <=10ppm Si is coated on the inner surface of the crucible. The crystalline AlN is preferably obtained by chemical vapor deposition. Since the crystalline AlN does not have a layer structure, the AlN layer is not peeled off unlike the conventional BN even when repeatedly used as a crucible. Besides, crystalline AlN is a chemically stable substance in comparison to amorphous AlN, and the resistance to the corrosion of molten metals, etc., is excellent. The content of Si must be controlled to <=10ppm, and the electrical characteristic is remarkably deteriorated when more Si is mixed.
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