发明名称 |
LOW TEMPERATURE TUNNELING TRANSISTOR |
摘要 |
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage VG which modifies the barrier height between source and drain thereby changing the tunnel probability. |
申请公布号 |
DE3373167(D1) |
申请公布日期 |
1987.09.24 |
申请号 |
DE19833373167 |
申请日期 |
1983.12.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRAF, VOLKER;GUERET, PIERRE LEOPOLD;MUELLER, CARL ALEXANDER |
分类号 |
H01L29/15;H01L39/22;(IPC1-7):H01L39/22 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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