| 摘要 |
PURPOSE:To improve the dampproof property of the semiconductor device having a multilayer interconnection structure by a method wherein the guide to be used for positioning of the second layer wiring and the through hole of the second layer insulating film and the second wiring are formed simultaneously. CONSTITUTION:A semiconductor element region 2 is formed on the surface of a semiconductor substrate 1, and the first layer wiring 3 is formed extending to an SiO2 film 10. The first layer insulating film 4 of SiO2 or PSG is formed, and a concavity 12 is provided at the position of a guide together with a through hole 11 by performing an etching. Aluminum is vapor-deposited, the second layer wiring 5 is formed by patterning and, at the same time, a guide 7 is formed on the concavity 12. The second layer insulating film 6 of SiO2 or PSG is formed, and a hole 18 with which the guide 7 will be exposed is provided. When moisture 9 is infiltrated through the hole 18, the guide 7 is positioned on the oxide film 10, and the second layer wiring 5 is located on a different levelled interlayer insulating film 4, and this prevents the infiltration of the moisture 9, thereby enabling to improve the dampproof property of the semiconductor device for the wiring. |
