| 摘要 |
Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically. |
