| 摘要 |
A photoconductive power switch capable of producing electrical pulses of at least 10 amperes and 100 volts at switching speeds of one nanosecond or less is disclosed. The photoconductive power switch comprises a wafer of high resistivity semiconductor material selected from Group III and Group V compounds, preferably indium phosphide. A pair of electrodes are mounted on the wafer and are spaced apart to form a gap. A diode laser is provided for illuminating the gap with light having a wavelength of from about 200 to about 850 nanometers at an intensity of at least 50 picojoules.
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