发明名称 |
METHODS AND APPARATUS FOR THERMALLY ASSISTED PROGRAMMING OF A MAGNETIC MEMORY DEVICE |
摘要 |
A magnetic memory device comprises a magnetic memory cell that includes a pinned layer and a free layer separated from the pinned layer by an insulating layer. The magnetic memory device also comprises a thermal plate in contact with the free layer. The magnetic memory device can be configured so that a first current flows through the thermal plate heating the thermal plate. The magnetic behavior of the free layer can be altered due to the heating caused by the first current, making it easier to switch the orientation and magnetization of the free layer. A second current can then flow through a bit line near the free layer generating a magnetic field sufficient to switch the orientation of magnetization of the free layer.
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申请公布号 |
US2009034326(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080252263 |
申请日期 |
2008.10.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;HSIEH KUANG-YEU |
分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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