| 摘要 |
PURPOSE:To eliminate an interlayer insulating film from being polished to decrease its withstanding voltage in the step of forming multilayer interconnection by forming a silicon nitride grown by a plasma having low polishing rate as a stopper when burying aluminum in an electrode window by utilizing the polishing. CONSTITUTION:First layer wirings 12 are formed similarly to a conventional example on a base such as a silicon substrate 11, phosphorus, silicate glass (PSG) is grown 1.0mum thick, and the surface is flattened. A silicon nitride film 16 is formed approx. 1,000Angstrom thick on an insulating film 13, and a plasma growth method which can be executed at approx. 450 deg.C is used to grow it. An electrode window 14 is formed at next stage, an aluminum film 15 is formed 1.5mum thick, and the film 15 is polished. Thus, the silicon nitride film is formed to polish it without affecting the distribution of the polishing to improve the working efficiency, thereby preventing the PSG from being polished not to impair interlayer withstanding voltage characteristics.
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