| 摘要 |
PURPOSE:To improve the effective current amplification factor of an inverter by reducing the reverse current amplification factor of a lateral transistor in I<2>L. CONSTITUTION:An I<2>L inverter collector 7, an emitter electrode leading region 8 and a lateral transistor reverse current amplification factor decreasing region 9 are simultaneously formed in N<+> type diffusion, and electrodes 10 are eventually formed. The N<+> type region 9 for reducing the reverse current amplification factor beta1 of the lateral transistor contacts an inverter base and is separated from the lateral transistor emitter. In the I<2>L of such a configuration, the region 9 of the lateral transistor and the emitter separated, and it does not almost change, but since the N<+> type region contacts the collector of the lateral transistor, electrons implanted from the base to the collector are increased to decrease the reverse current amplification factor beta1. Thus, even if the upper current amplification factor betaUP of a reverse structure vertical transistor is the same, an inverter effective current amplification factor betaeff is increased. |
