发明名称 STATIC COLUMN TYPE DYNAMIC RAM
摘要 PURPOSE:To read a data independently of an activation permissible time by latching the read data of a memory cell to a column sense amplifier and disconnecting the column sense amplifier and a bit line after the latch. CONSTITUTION:A column sense amplifier CSA is arranged to bit line pair BL, the inverse of BL and gates Q7, Q8 are inserted to disconnect the bit line pair BL, the inverse of BL and the amplifier CSA. In selecting a word line, the data of each memory cell belonging to the selected word line comes to each bit line, the data is fetched in the amplifier CSA by opening the gates Q7, Q8 and then (at refresh, etc.,), the gates Q7, Q8 are closed. Thus, other word line is selected to activate the amplifier CSA for refresh. Since the read data is latched in the amplifier CSA, the data of each bit line is read one after another via data buses DB, the inverse of DB by using a column decoder CD to open gates Q5, Q6,... one after another.
申请公布号 JPS62214586(A) 申请公布日期 1987.09.21
申请号 JP19860056426 申请日期 1986.03.14
申请人 FUJITSU LTD 发明人 TAGUCHI MASAO
分类号 G11C11/401;G11C11/34;G11C11/409 主分类号 G11C11/401
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