| 摘要 |
PURPOSE:To obtain a high output and to eliminate the waveform distortion by making the gate width of a FET only whose gate and source and connected directly wider than the other gate width so as to increase the operating current. CONSTITUTION:The gate width of the FET 2 is made larger than that of the FET 1 to increase the current capacity of the FET 2. In selecting, for example, the gate width of the FET 1 as 200mum and the gate length as 1.5mum then the gate width of the FET 2 is selected as 400mum. Thus, the current capacity of the FET 2 is increased, the amplitude of an output signal is made large to improve the distortion.
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