| 摘要 |
PURPOSE:To form a pattern having a clearance in submicron through conventional photolithography by shaping width in size narrower than a resist pattern through overetching when a gate electrode is patterned through a photoetching technique. CONSTITUTION:A Schottky barrier forming metallic layer 8 is formed onto the whole surface of an a-Si layer 7, a photo-resist is applied onto the metallic layer 8, resist patterns 9 are shaped through normal exposure and development, and the exposed metallic layer 8 is removed through plasma etching. The metallic layers 8 are etched, intruding from the resist patterns 9 through excess plasma etching at that time, thus forming clearances 10. Metallic layers 11 are shaped at previously etched positions, holding the clearances 10 by forming the metallic layers 11 in the same kind and the same thickness as before-hand shaped ones through a sputtering method, etc. from the upper sections of the resist patterns 9, and the metallic layers 8, 11 with the clearancec 10 in submicron are formed by removing the resist patterns 9. |
