| 摘要 |
PURPOSE:To enable the vertical superposition of through holes and thereby to attain high integration, by a method wherein a wiring of an upper layer of multilayer interconnection is constructed of two layers, an upper-side layer and a lower-side layer, and a packing is inserted between these upper-side and lower-side layers in a through hole portion so as to make a surface smooth. CONSTITUTION:An aluminum film is connected on an insulating film 2 of a semiconductor substrate 1, a first wiring 3 is formed of it by patterning, and a silicon oxide film is made to grow thereon to form a first interlayer insulating film 4. Then, a through hole 5 is opened in required places, and aluminum as a lower-side layer 6a of a second wiring is connected on the whole surface and is connected electrically to the first wiring 3 in the through hole 5. Next, a silicon oxide film 13A is made to grow on the whole surface so that it covers the through hole 5 completely, and this silicon oxide film 13A is etched back so that it is left only in a concavity in the through hole 5 of the lower-side layer 6a. Thereby the state of concavity is absorbed, so as to make the surface smooth. According to this constitution, through holes can be superposed vertically and high integration can be attained.
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