| 摘要 |
PURPOSE:To obtain a high-efficiency and low-threshold value semiconductor laser by a method wherein, in case the quantization dimensions in one direction of each quantum well layer differ from each other, values of energy between one level are coincided with each other by changing the quantization dimensions in the other of two-dimensional directions of each quantum well layer. CONSTITUTION:Three layers of a non-doped GaAs quantum well layer 6, an Al0.3Ga0.7As barrier layer 7 and a GaAs quantum well layer 8 are laminated on an n-type Al0.45Ga0.55As barrier layer 5. The quantization dimensions in one direction (Y direction) of each quantum well layer 6 and 8 differ from each other. In that case, the quantization dimensions in the other of two-dimensional directions (Z direction) of each quantum well layer 6 and 8 are changed. Whereupon, the energy gaps in the ground state of the respective quantization energized, which are formed of the conduction band and valence band of each quantum well layer 6 and 8, are coincided with each other. Thereby, a high- efficiency and low-threshold value semiconductor laser can be obtained.
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