| 摘要 |
PURPOSE:To assure the threshold value as designed by a method wherein after manufacturing a field-effect transistor, if the measured value of voltage is different from the designed value, the film thickness of passivation nitride film is adjusted to correct the difference. CONSTITUTION:After implanting Si ions using a resist mask exposing a channel region 6 of a semiinsulating GaAs substrate, the channel region 6 is formed by annealing process. First, a gate 2 is formed by patterning process. After implanting Si ions using the gate 2 as a mask, high concentration N<+> regions 7 are formed by annealing process. Second, after coating the overall surface with a passivation nitride film 5 by reacting firstly AuGe or Au and secondly SiH4 and NH4 to overall surface, the nitride film 5 is removed from a source 3 and a drain 4 using the resist. Successively, the threshold value of voltage is measured and if the measured value is different from the designed value, the nitride film 5 is additionally coated after removing the resist to adjust the threshold value of voltage.
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