| 摘要 |
An orifice is submerged in a melt of semiconductor material under such conditions that melt does not enter the orifice and a crystalline rod of the material is pulled from the orifice. A melt of germanium and silicon may be contained in a crucible of quartz and graphite, respectively. The pulled rod may have a diameter of 1-2 mm. The distance from the <PICT:0916390/III/1> <PICT:0916390/III/2> orifice of the point at which the melt crystallizes, and hence the diameter of the rod, may be maintained constant by means of an induction coil situated at the desired point, variation in the current in the coil causing variation in the rate of pulling. As shown in Fig. 2, an inner crucible 3 having an orifice 4 is connected to an outer crucible 5 containing a melt 9 by a bridge member 7. As shown in Fig. 3, inner crucible 6 and orifice 4 are formed in bridge member 7 and melt 9 extends above the upper face of bridge member 7. |
