| 摘要 |
PURPOSE:To improve freedom in mask design and to simplify manufacturing processes, by forming an active layer, a first conductive film and a second conductive film on the surface of a semiconductor substrate, forming a conduction layer at a part of the active layer with the second conductive film as a mask, and forming a third conductive film on the conduction layer. CONSTITUTION:An SiO2 insulating film 2 having a hole part is formed on a semi-insulating substrate 1. With the film 2 as a mask, ions are selectively implanted, and an N-type active layer 3 is formed. An indium electrode 4 is formed and ohmic contact is provided. Then tantalum tungsten silicide gate 5 is formed on the electrode 4, and ohmic contact is provided through the N-type active layer 3 and the electrode 4. The gate 5 and the N-type active layer 3 are directly contacted, and Schottky contact is simultaneously formed. With the gate 5 and the SiO2 film 2 as masks, ions are implanted, and N<+>-ion implanted layer 6 is formed. The SiO2 film is once removed, and the SiO2 film 2 is newly formed. A hole part is formed on the layer 6, and a metal part 7 is formed and ohmic-contacted with the layer 6. Finally, a hole part is formed in the insulating film 2 on the gate 5.
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