DRY ETCHING OF ALUMINUM AND ALUMINUM ALLOY

摘要

PURPOSE:To decrease the residue due to silicon and obtain a clean and fault-free pattern after the termination of an etching by adding the trace quantity of fluorine compound when aluminum and aluminum alloy film are etched by using silicon tetrachloride. CONSTITUTION:A processing is conducted by discharging a mixed gas containing silicon tetrachloride and fluorine compound. The fluorine compound generates fluorine radical by a discharge and the fluorine radical reacts on silicon. Thus, since the silicon compound on the surface of a wafer reacts on the fluorine radical to be resolved, a residue can be decreased.