| 摘要 |
PURPOSE:To form far better element isolation layers than the element isolation layers made of polyimide and obtain semiconductor elements with high reliability by a method wherein the element isolation layers are made of the material practically same as the material of the semiconductor elements. CONSTITUTION:A plurality of semiconductor elements 21 and element isolation layers 29 which are provided between the semiconductor elements 21 and isolate the semiconductor elements 21 electrically and optically are provided on a same foundation 11. The element isolation layer 29 is composed of polycrystalline layers, i.e. a P-type AlGaAs polycrystalline layer 31 and an N-type AlGaAs polycrystalline layer 33. Therefore, the wafer structure is such that a plurality of light emitting elements are provided on the foundation 11 and polycrystalline layers are provided between the light emitting elements. The resistance values of the polycrystalline layers 31 and 33 are much higher than those of the semiconductor element forming layers 21. The heat resistant properties of the polycrystalline layers 31 and 33 are much better than those of resin such as polyimide. As the element isolation layer 29 is made of the same material as that of the semiconductor element isolating layer 21, various properties such as thermal expansion of the semiconductor element and that of the element isolation layer are practically the same.
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