| 摘要 |
PURPOSE:To obtain a light-emitting diode, whose luminance is hardly deteriorated even by lighting for a prolonged time, by previously executing annealing under conditions, in which the vapor pressure and temperature of arsenic or an arsenic compound are specified, and using a wafer, on which a single crystal substrate, residual thermal stress of which is relaxed, is grown in an epitaxial manner. CONSTITUTION:When a single crystal layer consisting of a III-V compound is grown on a gallium arsenide single crystal substrate in an epitaxial manner and an epitaxial wafer for a light-emitting diode is shaped, a gallium arsenide single crystal substrate annealed under the conditions of the vapor pressure of 2-760mmHg of arsenic or an arsenic compound and a temperature of 700-1,100 deg.C is used. Arsenic remarkably escapes from the surface of gallium arsenide when vapor pressure is less than 2mmHg at that time, and the pressure resistance of an annealing device must be increased when vapor pressure exceeds 760mmHg. Annealing does not progress sufficiently when the temperature is less than 700 deg.C, and quartz instruments employed for annealing are deformed and impurities from quartz are mixed when it exceeds 1,100 deg.C. |
