| 摘要 |
PURPOSE:To reduce the capacitance of a floating diffused layer and to amplify even minute amount of transfer charge, by providing one conductivity type floating diffused layer region so that the region is separated from the other conductivity type channel stopper region. CONSTITUTION:On the surface of the other conductivity type semiconductor substrate, the following parts are formed: a charge transfer element 1; a final gate 1 of the charge transfer element; a one conductivity type floating diffused layer 3; a reset gate 4, a one conductivity type diffused layer 5; a high concentration and one conductivity type channel stopper region 6; an MOS transistor 7 and a resistor 8 constituting a source follower amplifier; an output terminal 9; and a low concentration and the other conductivity type region 10. The floating diffused layer 3 does not form a junction with the channel stopper region 6. The capacitance of the floating diffused layer 6 is formed by a junction with the other conductivity type semiconductor substrate at the bottom part and by a junction with the low concentration and the other conductivity type region 10. The capacitance has a very small value. Therefore, the minute amount of the transfer charge can be sufficiently responded.
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