发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To avoid the malfunction of transfer of magnetic bubbles between transfer paths by providing a strip pattern made of a nonmagnetic substance along the transfer direction of the magnetic bubbles between ion implanting transfer paths constituting a minor loop. CONSTITUTION:The strip pattern PS made of a nonmagnetic substance such as Mo or Au is formed along the transfer direction P of magnetic bubbles B among ion implanting transfer paths m1-m3 constituting the minor loop (m) group. Since the strip pattern PS is provided among the paths m1-m3, a potential barrier is formed on a buffle magnetic material LPE due to stress from the strip pattern PS. Then the potential barrier avoids the transfer of the magnetic bubble B to adjacent ion implanting transfer paths.
申请公布号 JPS62202390(A) 申请公布日期 1987.09.07
申请号 JP19860043952 申请日期 1986.03.03
申请人 HITACHI LTD 发明人 KONDO HIRONORI;HIROSHIMA MINORU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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