| 摘要 |
PURPOSE:To increase the nucleation density and produce a homogeneous and dense diamond film, by introducing a mixed gas of a hydrocarbon and H2 into a reaction vessel containing a substrate having uniformly dotted metal (compound) and activating the hydrocarbon. CONSTITUTION:A metal, e.g. Ti, or a compound thereof, e.g. TiB2, having >=800 deg.C melting point is uniformly dotted on the surface of a substrate in forming a film to give 10<5>-10<11> particles having 0.005-5mum particle size/cm<2>. The resultant substrate is then placed in a reaction vessel and a mixed gas of a hydrocarbon gas, e.g. CH4, C2H2, C2H4, etc., and H2 gas at 0.005-0.15 mixing ratio is introduced into the reaction vessel. The substrate is then heated at 500-1,300 deg.C and plasma is simultaneously generated by irradiation with electron rays, high frequency, microwaves, etc., to activate the hydrocarbon and form the aimed diamond film on the substrate.
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