| 摘要 |
PURPOSE:To obtain a highly reliable laser device having a single basic lateral mode and capable of growing high-quality crystals on a surface having stepped portions even with mixed crystals having strict lattice-matching conditions, by utilizing the same V-family element for a current blocking layer and for a substrate. CONSTITUTION:A semiconductor laser device according to the present invention comprises a semiconductor substrate 11 having a first type of conductivity, a clad layer 14 of the first type of conductivity, an active layer 15 and clad layers 16-18 having a second type of conductivity and having a linear projection 18 thereon. A double hetero junction structure is thus formed on the semiconductor substrate 11. A current blocking layer 21 is provided on the double hetero junction structure except at least a part of the projection 18 of the clad layers having the second type of conductivity so that it performs optical waveguide and constriction of electric current. In such a semiconductor laser device, the substrate 11, he double hetero junction structure 14-18 and the current blocking layer 21 may be formed of compound semiconductors of III-V families, while the double hetero junction structure 14-18 contains a V family element different from an V-family element composing the substrate 11 and the current blocking layer 21 contains the same V-family element with the substrate 11. |
