| 摘要 |
PURPOSE:To prevent the occurrence of nonuniformity in electric characteristics between transistors in a plurality by a construction wherein a low-concentration diffused region of a drain region of a transistor having an LDD structure is provided in two places for one transistor. CONSTITUTION:First to third semiconductor regions 12-14, which are formed by diffusion of impurities of a second conductivity type, isolated from one another and arranged in a row, are provided on a semiconductor substrate 11 of a first conductivity type, and first and second gate electrodes 17 are provided on the substrate 11 between the first and second semiconductor regions 12 and 13 and between the second and third semiconductor regions 13 and 14, while means 20 to connect electrically the first and third semiconductor regions 12 and 14 and means to connect electrically the first and second gate electrodes 17 are provided. Moreover, fourth and fifth semiconductor regions 18 and 19 wherein impurities of the second conductivity type are diffused in lower concentration than in the first and third semiconductor regions 12 and 14 are provided on the gate electrode 17 side of the first semiconductor region 12 and the third semiconductor region 14, respectively. The first, third, fourth and fifth semiconductor regions 12, 14, 18 and 19 are formed as drain regions, and the second semiconductor region 13 as a source region. |
