| 摘要 |
PURPOSE:To enable mass production of deposited films having various film qualities to be stably performed, by bringing gaseous raw materials into contact with gaseous halogen-group oxidizing agents to produce precursors in excited states and making these precursors serve a supply sources of deposited film constituents. CONSTITUTION:Gaseous raw material for deposited film formation, gaseous halogen group oxidizing agents which have characters playing oxidizing actions on these raw materials, and constituents whose elements serve as valence electron-controlling agents are introduced in contact states into a vacuum chamber 120, to produce a plural number of precursors. These precursors are brought in contact with a substrate 118 heated by a heater 113 in the chamber 120, to form crystalline deposit films on the substrate 118. Since this method of forming deposited films makes energy to excite reaction from the outside unnecessary, in particular, and temperature of the substrate can be made low. Changing the temperature enables crystalline deposit films to be arbitrarily formed. Besides, the method is excellent in productivity and mass production.
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