发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To drive a word line to a selection level at high speed by providing sense amplifiers which drive the word line to the selection level when the level of the word line arrives at a prescribed intermediate level between a non- selection level and the selection level. CONSTITUTION:In a sense amplifier SA1 provided at respective word line terminal at the opposite side of a decoder circuit DCE, a detecting MOSFET Q13 has the intermediate level of the word line between the selection level and the non-selection level, as a threshold voltage. Therefore, by supplying a driving signal from the decoder circuit to a prescribed word line, the MOSFET Q13 is turned on by the slight rising of the level in the word line. Thereby, high level voltage as a good selection level for the word line is supplied from the opposite direction of the propagating direction of the driving signal from the decoder circuit. In this way, the word line can be driven to the selection level at high speed.</p>
申请公布号 JPS62197994(A) 申请公布日期 1987.09.01
申请号 JP19860039184 申请日期 1986.02.26
申请人 HITACHI LTD 发明人 YAMAGA KIYOHISA;IKEDA SHINICHI;SUZUKI YOSHITO
分类号 G11C17/18;G11C17/00 主分类号 G11C17/18
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