| 摘要 |
The present invention provides a process for preparing silicon carbide whiskers. According to the process, carbon black having the following properties (a) to (c) is blended, as a carbonaceous material, with a silicon source material, and the resulting mixture is heated in a non-oxidizing atmosphere at 1,300 DEG to 1,800 DEG C. (a) Nitrogen adsorption specific surface area: 150 to 500 m2/g (b) Dibutyl phthalate absorption: 120 to 200 ml/100 g. (c) Tint strength (%): equal to or below a value calculated according to the following formula: 0.3496x(nitrogen adsorption specific surface area)-0.2143x(dibutyl phthalate absorption)+101.
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