| 摘要 |
PURPOSE:To prevent the generation of an over-etching section, and to reduce a defect rate by detecting the state of etching of a material to be worked, analyzing a signal from a detecting means and changing the temperature distribution of the material to be worked on the basis of a signal from an analysis means. CONSTITUTION:The state of etching at points on a material to be worked 4 corresponding to each point, points, Z, Y, X, -Y and -Z, on a substrate 5 is detected. An output signal from a photoelectric tube 6 is inputted to an analysis section 10, the thickness of the material is monitored by the analysis section 10, and an etching rate during etching is computed. Temperature informations at respective point are inputted to the analysis section 10 from temperature sensors 8 the substrate 5. The analysis section 10 decides the uniformity of etching rates by reaching to any temperature at the unit of deg.C of each point from etching-rate date at respective point, temperature data at separate point and the data of the changes of rates of etching rates to temperatures. The analysis section 10 transmits a signal over a temperature-holding medium supply source 9 so as to keep a proper temperature, and supplies each point with a medium at an optimum temperature. Accordingly, a defect rate is reduced.
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