| 摘要 |
PURPOSE:To improve the operating speed and the reliability of a semiconductor device by a construction wherein the conduction band of a first semiconductor layer generates electrons being at an energy level lower than the Fermi level and in a two-dimensional state, while the valence electron band of a second semiconductor layer generates holes being at an energy level higher than the Fermi level and in the two-dimensional, in the vicinity of a hetero junction interface, and a current produced by the electrons and the holes along the hetero junction interface is controlled by a Schottky depletion layer. CONSTITUTION:The device is so constructed that an energy level EC of the conduction band of InAs is lower than a level EV of the valence electron band of GaSb and that the level EC of the conduction band of InAs is lower than the Fermi level EF, while the level EV of the valence electron band of GaSb is higher than the Fermi level EF, in the vicinity of a hetero junction interface. Since a Coulomb force acts between electrons and holes, with the hetero junction interface between them, in this construction, two-dimensional electrons and holes are generated and bound thereby. Therefore, it is unnecessary to dope impurities of donors and acceptors in the two semiconductor layers, and a problem due to a deep donor level is settled. |
