| 摘要 |
PURPOSE:To narrow a space between a base electrode and an emitter, to scale down the size of a transistor and to improve high-frequency operation and performance by forming a shallow base layer by an silicide layer and using the same silicide layer as a base leading-out electrode. CONSTITUTION:A first high melting-point metallic silicide 601, such as MoSi, TiSi, etc. is shaped extending over the upper section of a first oxide film 102 from the whole surface of a base region through photoetching, and a p-type impurity such as boron is implanted into the silicide as the base region by a photo-mask 301. The photo-mask 301 is removed, and B is diffused through heat treatment to form a base layer 61. A second oxide film 402 is deposited on the whole surface. The base layer is shallowed, and a section between base- emitter electrodes is shortened, thus scaling down the size of a transistor both in the vertical direction and the transverse direction, then improving high-frequency operation and performance.
|
