| 摘要 |
PURPOSE:To obtain a safe, uniform and high quality crystal through the growth under reduced pressure by resisting the atmospheric pressure through pressure reduction with a cylindrical external reaction pipe, suppressing disturbance of gas flow such as thermal convection and realizing epitaxial growth with the internal reaction pipe other than the cylindrical pipe from which uniform gas flow can be obtained. CONSTITUTION:The down-stream end 6 of gas flow of internal reaction pipe 2 is opening to the interior of external reaction pipe 1 and thereby the internal pressure of external reaction pipe 1 is equal to that of internal reaction pipe 2. In the case of realizing growth of InP in the MOCVD apparatus, triethylindium 10 which is the raw material gas of indium (In) as the element of group III is bubbled by the carrier gas (mainly H2) 12 of which flow rate is controlled by a mass-flow 11 and thereby it is supplied to the internal reaction pipe 2 as the vapor gas through a gas supply pipe 13. Meanwhile, phosphin 14 which is the raw material of phosphorus (P) of the element of group V is controlled in its flow rate by the mass-flow 15 and then supplied to the internal reaction pipe 2 by the gas supply pipe 16. The raw material gas supplied realized InP epitaxial growth through thermal decomposition on the surface of substrate 5 heated up to the growth temperature of 650 deg.C.
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