| 摘要 |
1,030,926. Semi-conductor devices. TEXAS INSTRUMENTS Inc. April 3, 1963 [July 17, 1962], No. 13229/63. Heading H1K. A PN junction emerges at a surface of a semi-conductor body beneath an oxide layer which is in turn beneath a glass layer, an ohmic connection to the body being made through an opening in the oxide and glass layers. Immediately before the application of the glass layer, the oxide-covered device is baked in a helium atmosphere to remove moisture. |
