| 摘要 |
PURPOSE:To improve a junction capacitance and a leakage current substantially and improve radio frequency response by a method wherein a flat stripe-shape active layer is provided and semiconductor regions which have conductivity types opposite to each other are contacted with the left and right sides of the active layer and carriers are injected into the active layer from those semiconductor regions. CONSTITUTION:Confinement layers 4 and 6 on the direction of the epitaxial growth of a flat stripe-shape active layer 5 (vertical direction) are composed of insulating or high resistance I-type semiconductor layers so as not to form a P-N junction along the boundary where the junction area is the widest. Instead, semiconductor regions 2 and 3 which have conductivity types opposite to each other are provided to be contacted with the left and right sides of the active layer 5 and carriers are injected into the active layer 5 from those regions 2 and 3. With this constitution, a P-N junction area is significantly reduced compared to the conventional constitution so that a leakage current and a junction capacitance can be substantially improved and the radio frequency response of the semiconductor light emitting device can be improved. |
