MATERIAL FOR LIGHT EMITTING ELEMENT

摘要

A semiconductor material comprises Sn doped InGaP. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75. The material 2, 3, 4 forms part of a structure with a GaAs substrate 1 to form a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.