| 摘要 |
PURPOSE:To realize a high-precision element not dangerous to workers or users and free of neutralization of electrical charges resulting from charge injection from the electrode side by a method wherein a barrier layer installed between a P-type layer and light-transmitting electrode in a P-N junction semiconductor is composed of an amorphous carbon thin film. CONSTITUTION:An electrode 2 is provided outside an N-type layer 3b belonging to a P-N junction semiconductor 3 that turns photovoltaic due to the photoelectric effect when hole.electron pairs are generated in light 10 and a light- transmitting electrode 5 is provided through the intermediary of a barrier layer 4 on the outside of a P-type layer 3a. The barrier layer 4 in this design is an amorphous carbon thin film. For example, on a side of a panel-geometry electrode 2 made of aluminum, a photo-excited P-N junction semiconductor 3, a barrier layer 4 that is an amorphous carbon thin film, and a light- transmitting electrode 5 that is a gold thin film are deposited, in that order, for the construction of a photo-excited semiconductor element 1. Said barrier layer 4 that is an amorphous carbon thin film is formed, for example, by using an RF magnetron spatter unit.
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