| 摘要 |
PURPOSE:To realize a field effect transistor excellent in drain current saturation factor and mutual conductance even when a gate is rendered shorter by a method wherein an ohmic electrode metal itself is provided very near to a gate electrode. CONSTITUTION:A channel layer 5 to develop into a field effect transistor is formed on a semiconductor substrate 4 and, on the channel layer 5, a temporary gate pattern 6 is formed for the determination of a gate form. A side wall 8 is provided on the temporary gate pattern 6. Next, an ohmic metal 9 is attached to the surface of the channel layer 5, and the ohmic metal 9 positioned on top of the temporary gate pattern 6 is removed. The surface of the semiconductor substrate 4 is covered by a coating 11, the coating 11 positioned on top of the temporary gate pattern 6 is removed, the temporary gate pattern 6 is selectively removed for the formation of a gate opening 14 in the coating 11, and a gate electrode 1 is formed in the gate opening 14. In this way, improvement is attained in the drain current saturation factor and in the scatter of gate threshold voltages. Mutual conductance may be increased by lowering source resistance.
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