| 摘要 |
PURPOSE:To grow the titled good-quality oxide single crystal without any defect by floating the heating ring of an electrically conductive substance whose buoyancy is controlled for the purpose, and providing a low-temp. gradient in the vicinity of solid-liq. interface and a high-temp. gradient at the region remote from the interface. CONSTITUTION:A mixture of Bi2O3 and SiO2 as the raw material 2 is charged in a platinum crucible 1, and the heating ring 3 made of platinum is floated. The raw material 2 is heated by a high-frequency coil 4 and melted, and a seed crystal 6 fixed to the tip of a lifting shaft 5 is dipped in the melt 2 of the raw material and lifted while being rotated to grow a single crystal 7. Although the raw material is heated only from a crucible in the conventional method, heating by the heating ring (platinum ring) 3 of a conductive substance floating on the surface of the melt 2 is further added in this method. The two thermal environments, namely the low-temp. gradient in the vicinity of a solid-liq. interface necessary for controlling the generation of cracks and irregularily grown edges, and the high-temp. gradient at the region remote from the interface necessary for controlling the generation of a cell growth structure and bending of crystals, are further realized. Consequently, a high-quality oxide single crystal with less defects can be grown.
|
