| 摘要 |
PURPOSE:To suppress the yield of spikes and to improve adhesion of a metal silicide layer, by using boron as impurities for a polycrystalline silicon layer, which is deposited on a insulating film. CONSTITUTION:On a substrate 1, a polycrystalline silicon layer 4a and a metal silicide layer 5 are formed. At this time, born is used as impurities for the silicon layer 4a and a conductivity is imparted. Then, the yield of spikes is suppressed when activating heat treatment of source and drain 6 and heat treatment for implementing the metal silicide are performed. Thus the adhesion of the silicide layer is improved.
|
