| 摘要 |
PURPOSE:To provide low holding force of a sputtered film, by making the crystal grain size of a surface to be sputtered smaller than a crystal grain size No.3 of JIS austenite. CONSTITUTION:As the composition of a target member, one or two kinds of 70-85wt% Ni, 2-10wt% Cu, 1-6wt% Mo and 0.5-3wt% Cr are included. Fe is substantially included for the remaining part. At this time, the crystal grain size of a surface to be sputtered is made smaller than a crystal grain size No.3 of JIS austenite. Thus, the low holding force of the sputtered film is provided.
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