| 摘要 |
PURPOSE:To prevent short circuits between neighboring wiring films, by depositing a film on the entire surface of the wiring film, which is patterned and formed, and removing the film, which is deposited on the surface of the wiring film by anisotropic etching. CONSTITUTION:A wiring film 15 having a specified pattern is formed on an Si semiconductor substrate 12. A titanium nitride film 16 characterized by large tensile strength, high chemical resisting property and high heat resistance is formed on one surface of the substrate 12. The film 16 undergoes anisotropic etching. The film 16 is made to remain at the side wall of the patterned Al wiring film 15. Thus shortcircuits between the neighboring wiring films can be prevented.
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