| 摘要 |
<p>PURPOSE:To obtain a medium for an optomagnetic memory simply rewritable very stably against an external magnetic field by using a switched connection 2-layer comprising an antiferromagnetic recording layer and a ferromagnetic read layer as basic structure. CONSTITUTION:The ferromagnetic layer has a low coercive force and the Curie temperature higher than the Neel temperature of the antiferromagnetic substance constituting the antiferromagnetic layer 2. A magnetic field H is applied, the laser light is collected by a lens 3 and focused to a film to raise the temperature of part of the medium up to a temperature T more than the Neel temperature of the antiferromagnetic substance. When the temperature of the optomagnetic memory medium reaches the temperature T, the magnetic arrangement of the antiferromagnetic substance is lost, the ferromagnetic layer 1 reaches the substantial state of a small coercive force and an inverted magnetic domain 4 is produced by the magnetic field H. When the temperature is decreased to a temperature being the Neel temperature of the antiferromagnetic substance or below, although the antiferromagnetic substance is arranged again magnetically, the switched interconnection is exerted between the spin of the ferromagnetic layer 1 and the spin of the antiferromagnetic layer 2 and the arrangement 5 of the magnetic moment corresponding to recording information is formed in the antiferromagnetic layer 2. Thus, the coercive force of the ferromagnetic layer 1 having a small coercive force substantially is increased to store stably the recording information.</p> |
