发明名称 METHOD AND DEVICE FOR PLASMA TREATMENT
摘要 PURPOSE:To irradiate a sample by neutral particle beams and treat the sample, and to reduce the electrostatic damage of the sample by charge-neutralizing ion beams changed into plasma and generating the neutral particle beams. CONSTITUTION:A treating gas is introduced to a discharge chamber 1 for a plasma treater from a gas introducing port 2, and a magnetic field is applied by an electromagnetic coil 3. The discharge chamber 1 is supplied with microwaves from a microwave source from a waveguide 4, and plasma is gener ated in the inside by ECR discharge. Ions in the plasma are introduced to a treating chamber 6. The gas is induced to an electron shower device consisting of an insulating cover 7 mounted to the treating chamber 6, grids 10, etc. from a gas introducing port 12, high-frequency plasma is generated in the inside, and electrons in plasma are led out in the direction of the central axis from the grids 5. When ion beams from the discharge chamber 1 pass through the electron shower device, the ion beams are charge-neutralized by electrons and turned into neutral particle beams, and a wafer 13 is irradiated by the neutral particle beams without losing the directional properties of ion beams and the wafer is reacted.
申请公布号 JPS62185324(A) 申请公布日期 1987.08.13
申请号 JP19860026682 申请日期 1986.02.12
申请人 HITACHI LTD 发明人 WATANABE SEIICHI;NAKAZATO NORIO;NAWATA MAKOTO;FUKUYAMA RYOJI;FUKUSHIMA YOSHICHIKA
分类号 H01L21/302;C23F1/00;C23F4/00;H01L21/3065 主分类号 H01L21/302
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