| 摘要 |
PURPOSE:To form an insulating film of inorganic silica film with excellent bonding property to a surface layer while restraining a crack due to the difference in thermal expansion coefficient between a substrate and an element to be processed from occurring by a method wherein an organic silica film is processed in oxygen plasma. CONSTITUTION:An organic silica film 26 is plasma-irradiated 28 using oxygen gas at the vacuum degree of 100mTorr, output of 100W in a plasma etching device. Then, oxygen ion with high kinetic energy hits the organic silica film 26 to evaporate the solvent in organic silica film 26 further making the solvent degenerate into an insulating film 27 of inorganic silica film decomposing the organic constituent. Through these procedures, an insulating interlayer with excellent bonding property to a surface layer can be formed while forming an insulating film subject to neither cracks nor flow of pattern since this film is not affected by the differnece in thermal expansion coefficient between a substrate 20 and an element to be processed 22 due to no heat treatment applied.
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