| 摘要 |
PURPOSE:To obtain a complementary semiconductor device which has less leakage current and high reliability even when the thickness of an insulating film for interelement isolation is reduced by providing a high density impurity layer in contact with the insulating film in the lower portion of an MIS transistor. CONSTITUTION:A high density impurity layer contacted with an insulating film for interelement isolation is formed in the lower portion of an MIS transistor to prevent a silicon boundary of the film in the region from being inverted. In other words, since the high density impurity layer becomes a channel stopper, a leakage current is controlled. For example, insulating film 3 an for interelement isolation for separating, for example, an n-channel MOS transistor and a p-channel MOS transistor is formed of an SiO2 film with 0.25mum of thickness and 4mum of depth. A p<+> type impurity layer 8 contacted with the SiO2 film is formed in the lower portion of the n-channel MOS transistor. |
