| 摘要 |
PURPOSE:To enable forming a film with good concentration control efficiency without using a highly poisonous gas by depositing the film on a substrate by reactive sputtering using graphite which contains a semiconductive impurity as a target. CONSTITUTION:Deposition substrates 17, 18 on which a thin film is formed are mounted on substrate holders 19, 20 which are each supported with insulation on the inner surface of an upper lid 4 and the inner surface of a cylinder 2 or a deposition substrate 21 is mounted on a face-to-face electrode 8. The deposition substrates 17, 18 are positioned outside a region where the sputter particle of an excitation source is transported by plasma. That is, if a region A shown by a short dash line in a vacuum container 1 is a plasma state region generated between the electrodes 8, 9 and their periphery and a region B is a region wherein the sputter particle existing in the region A is transported, the deposition substrates 17, 18 are mounted in a region C which is outside the region B. A required dopant is previously doped on the solid graphite which is used for a carbon source of a target electrode 9 and a mixed gas is introduced from an atmospheric gas pipe 6 for a sputter gas.
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